Prof. Adel Asheri | Semiconductor Devices | Best Researcher Award
Full Time Professor at National research centre | Egypt
Adel Ashery Saleh Khalil is a distinguished physicist and full professor at the National Research Center, where he leads the Department of Solid State Physics. His expertise spans the preparation and characterization of single crystal devices and thin films, employing advanced techniques such as liquid phase epitaxial growth, electrochemical ionization, diffusion furnace processes, photolithography, chemical vapor deposition, spin coating, and sol-gel methods. He has manually developed and optimized these methodologies, demonstrating deep hands-on proficiency in experimental physics and materials science. His research focuses on the development of novel heterostructures and composite materials with enhanced electrical, dielectric, and optoelectronic properties, contributing significantly to resistive memory devices, high-k electronics, and advanced electronic components. Among his recent publications, he has explored Ag/Al/SiO2/n-Si/Ag heterostructures for dielectric tunability, Ag/MWCNTs-PVA composites exhibiting high electrical conductance and tunable capacitance, polypyrrole-multi-well carbon nanotube/titanium oxide/aluminum oxide/p-silicon heterojunctions for optoelectronic applications, dielectric properties of lattice-mismatched GaAs/p-Si heterojunction diodes, and gel-based PVA/SiO2/p-Si heterojunctions for electronic devices. With a total of 996 citations across 617 documents, 89 publications, and an h-index of 17, his work demonstrates both the impact and recognition of his contributions in the field. Combining theoretical understanding with practical implementation, he has established himself as a leading researcher in solid-state physics, particularly in the synthesis and characterization of advanced materials, devices, and heterostructures that address contemporary challenges in electronic and optoelectronic applications.
Profile: Scopus
Featured Publications
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Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO2/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter, 417758.
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Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.
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Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2025). Investigation of the optoelectronic properties of a novel polypyrrole-multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews, 14(1), 20250174.
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Ashery, A., Gaballah, A. E. H., Elnasharty, M. M. M., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience, 27(9).
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Ashery, A., Gaballah, A. E. H., Turky, G. M., & Basyooni-Murat Kabatas, M. A. (2024). Gel-based PVA/SiO2/p-Si heterojunction for electronic device applications. Gels, 10(8), 537.